The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2021
Filed:
Oct. 22, 2019
Shenzhen Weitongbo Technology Co., Ltd., Shenzhen, CN;
SHENZHEN WEITONGBO TECHNOLOGY CO., LTD., Shenzhen, CN;
Abstract
A method for fabricating a double-sided capacitor is disclosed, which includes: etching trenches having depths not reaching an intermediate insulating layer and trench structures having depths exceeding the intermediate insulating layer on both sides of a silicon-on-insulator (SOI) substrate; and sequentially depositing an insulating dielectric film and a conductive material on surfaces of the trenches and the trenches, then removing insulating material at a bottom of the trenches and the trenches are filled with the conductive material to form conductive channels. The upper conductive channel of the SOI substrate is insulated from an upper layer and is electrically connected to a lower layer; and the lower conductive channel is insulated from the lower layer and is electrically connected to the upper layer.