The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2021
Filed:
Mar. 02, 2018
Sharp Kabushiki Kaisha, Sakai, JP;
Akihiro Oda, Sakai, JP;
Yujiro Takeda, Sakai, JP;
Shogo Murashige, Sakai, JP;
Hiroshi Matsukizono, Sakai, JP;
SHARP KABUSHIKI KAISHA, Sakai, JP;
Abstract
An active matrix substrate includes: a substrate (); a peripheral circuit including a plurality of first TFTs (); and a plurality of second TFTs (), wherein each of the first and second TFTs () includes: a gate electrode (A,B); a gate insulating layer (); an oxide semiconductor layer (A,B) including a channel region (Ac,Bc), a source contact region (As,Bs) and a drain contact region (Ad,Bd), wherein the source contact region and the drain contact region are located on opposite sides of the channel region; a source electrode (A,B) that is in contact with the source contact region and a drain electrode (A,B) that is in contact with the drain contact region; the oxide semiconductor layer of the first TFTs and the second TFTs is formed from the same oxide semiconductor film; a carrier concentration in the channel regions (Ac) of the first TETs is higher than a carrier concentration in the channel regions (Bc) of the second TETs.