The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 27, 2021

Filed:

Jan. 17, 2018
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventor:

Tetsuo Gocho, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/762 (2006.01); H01L 21/84 (2006.01); H01L 27/146 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 29/08 (2006.01); H01L 29/167 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1207 (2013.01); H01L 21/76283 (2013.01); H01L 21/84 (2013.01); H01L 27/14612 (2013.01); H01L 27/14689 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02181 (2013.01); H01L 21/02271 (2013.01); H01L 21/02274 (2013.01); H01L 21/28035 (2013.01); H01L 21/31053 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 29/0847 (2013.01); H01L 29/167 (2013.01); H01L 29/4916 (2013.01); H01L 29/517 (2013.01);
Abstract

A semiconductor device according to an embodiment of the present disclosure includes: an SOI substrate in which a silicon substrate layer, a first insulating layer, and a semiconductor layer are layered in this order; a first transistor provided on the semiconductor layer; a second transistor provided on the silicon substrate layer and withstanding a higher voltage than the first transistor; and an element separation film provided between the first transistor and the second transistor, in which the element separation film includes a second insulating layer embedded in an opening that penetrates the semiconductor layer and the first insulating layer and reaches an inside of the silicon substrate layer, and a portion of the second insulating layer constitutes a gate insulating film of the second transistor.


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