The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2021
Filed:
Apr. 10, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Seok-Cheon Baek, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A vertical memory device may include gate electrodes on a substrate, a merged pattern structure and a cell contact plug. The gate electrodes may be spaced apart in a first direction orthogonal to the substrate, and may extend in a second direction parallel to the substrate. The merged pattern structure may extend in the second direction while merging ends of the gate electrodes of each level. Edges of the merged pattern structure may have a step shape. The merged pattern structure may include pad patterns electrically connected to the gate electrodes. The cell contact plug may extend through the merged pattern structure and be electrically connected to one of the pad patterns. The cell contact plug may be electrically insulated from other gate electrodes. The cell contact plug may contact a conductive material underlying. An upper surface of the cell contact plug may only contact an insulation material.