The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 27, 2021

Filed:

Sep. 21, 2016
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Wataru Sakamoto, Yokkaichi, JP;

Hiroshi Nakaki, Yokkaichi, JP;

Hanae Ishihara, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11568 (2017.01); H01L 29/792 (2006.01); H01L 27/11573 (2017.01); H01L 27/11578 (2017.01); H01L 27/11582 (2017.01); H01L 27/11575 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11568 (2013.01); H01L 27/11573 (2013.01); H01L 27/11578 (2013.01); H01L 27/11582 (2013.01); H01L 29/792 (2013.01); H01L 27/11575 (2013.01);
Abstract

A semiconductor device of the embodiment includes a stacked body, a first insulating layer, first and second staircase portionsand a second insulating layerThe stacked body includes a first electrode layer(WLDD) and a second electrode layer(SGD). The first and second staircase portionsare provided in a first end portiona second end regionThe second insulating layerextends in the X-direction. The second insulating layer divides the second electrode layer(SGD) in the X-direction direction. A length Lin the X-direction of the second insulating layeris longer than a length Lin the x-direction of the second electrode layer(SGD) and shorter than a length Lin the X-direction of the first electrode layer(WLDD).


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