The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2021
Filed:
Nov. 27, 2018
United Semiconductor Japan Co., Ltd., Kuwana, JP;
Taiji Ema, Inabe, JP;
Makoto Yasuda, Kuwana, JP;
United Semiconductor Japan Co., Ltd., Kuwana, JP;
Abstract
A semiconductor device is disclosed. A gate electrode is provided above a semiconductor substrate. A sidewall insulation film is provided to the gate electrode. Source and drain regions are provided in the substrate and contain first conductive impurities. A first semiconductor region is provided in the substrate, is on a source region side, and has a concentration of the first conductive impurities lower than the source region. A second semiconductor region is provided in the substrate, is on a drain region side, and has a concentration of the first conductive impurities lower than the drain and first semiconductor regions. A channel region is provided between the first and second semiconductor regions. A third semiconductor region is provided under the channel region, and includes second conductive impurities higher in concentration than the channel region. Information is stored by accumulating charges in the sidewall insulation film.