The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2021
Filed:
Jul. 29, 2019
Rohm Co., Ltd., Kyoto, JP;
Takanori Ozawa, Kyoto, JP;
Hiroaki Ito, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
Provided is a semiconductor device that has a low interface resistance between a contact plug and a bottom electrode of a real ferroelectric capacitor. A real capacitor oxidation suppression structure ST including a dummy ferroelectric capacitorand a second plugis formed. The dummy ferroelectric capacitorincludes a second bottom electrode, a second ferroelectric film, and a second top electrode, and is not used as a nonvolatile memory element. The second bottom electrodeis formed on an interlayer insulating film. The second ferroelectric filmis formed on the second bottom electrode. The second top electrodeis formed on the second ferroelectric film. The second plugpenetrates the interlayer insulating filmand electrically connects the second bottom electrodeto a semiconductor substrate