The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 27, 2021

Filed:

Feb. 01, 2020
Applicant:

Skyworks Solutions, Inc., Woburn, MA (US);

Inventors:

David T. Petzold, Chelmsford, MA (US);

David Scott Whitefield, Andover, MA (US);

Assignee:

Skyworks Solutions, Inc., Irvine, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 1/44 (2006.01); H01L 21/335 (2006.01); H01L 21/8234 (2006.01); H01L 23/00 (2006.01); H01L 27/12 (2006.01); H01L 21/84 (2006.01); H01L 23/66 (2006.01); H03H 9/24 (2006.01); H01L 29/786 (2006.01); H01L 21/762 (2006.01); H01L 21/764 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 49/02 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H04B 1/40 (2015.01); H01L 21/306 (2006.01); H01L 23/535 (2006.01); H01L 29/66 (2006.01); H01L 21/683 (2006.01); H01L 27/20 (2006.01); H03H 9/02 (2006.01); H01L 23/31 (2006.01); H01L 25/16 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/30604 (2013.01); H01L 21/6835 (2013.01); H01L 21/764 (2013.01); H01L 21/768 (2013.01); H01L 21/7624 (2013.01); H01L 21/76251 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 21/76895 (2013.01); H01L 21/76898 (2013.01); H01L 21/84 (2013.01); H01L 23/5283 (2013.01); H01L 23/535 (2013.01); H01L 23/66 (2013.01); H01L 27/1203 (2013.01); H01L 27/20 (2013.01); H01L 28/10 (2013.01); H01L 29/0649 (2013.01); H01L 29/66772 (2013.01); H01L 29/78 (2013.01); H01L 29/786 (2013.01); H01L 29/78603 (2013.01); H01L 29/78648 (2013.01); H01L 29/78654 (2013.01); H03H 9/02566 (2013.01); H03H 9/24 (2013.01); H04B 1/40 (2013.01); H04B 1/44 (2013.01); H01L 23/3121 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 25/16 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68318 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68359 (2013.01); H01L 2221/68368 (2013.01); H01L 2223/6677 (2013.01); H01L 2224/03 (2013.01); H01L 2224/03002 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/06135 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/94 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/1421 (2013.01); H01L 2924/15192 (2013.01); H01L 2924/15313 (2013.01);
Abstract

A semiconductor device includes a transistor implemented over an oxide layer, one or more electrical connections to the transistor, one or more dielectric layers formed over at least a portion of the electrical connections, an electrical element disposed over the one or more dielectric layers, the electrical element being in electrical communication with the transistor via the one or more electrical connections, a patterned form of sacrificial material covering at least a portion of the electrical element, and an interface layer covering at least a portion of the one or more dielectric layers and the sacrificial material.


Find Patent Forward Citations

Loading…