The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 27, 2021

Filed:

Oct. 25, 2019
Applicant:

Shenzhen Weitongbo Technology Co., Ltd., Shenzhen, CN;

Inventors:

Wenxuan Wang, Shenzhen, CN;

Jian Shen, Shenzhen, CN;

Hongchao Wang, Shenzhen, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/525 (2006.01); H01L 23/528 (2006.01); H01L 27/115 (2017.01);
U.S. Cl.
CPC ...
H01L 23/5256 (2013.01); H01L 23/5283 (2013.01); H01L 27/115 (2013.01);
Abstract

An e-fuse and a manufacturing method thereof, and a memory cell are provided. The method includes: providing a semiconductor substrate including a preset active region; forming an isolating region on the substrate, where the isolating region and the preset active region have a height difference and are connected by at least one side wall; forming a negative electrode and a positive electrode on the preset active region; and forming a fuse link on the side wall for connecting the negative electrode and the positive electrode. Accordingly, the line width of the fuse link is out of the limitation of the limit line width of the semiconductor process, the actual line width of the e-fuse may be smaller than the limit line width of the semiconductor process, and low fusing current is required for fusing.


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