logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10991620 B1

PDFFull Text
Date of Patent:
Apr. 27, 2021

Filed:

Feb. 22, 2019

Semiconductor device

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sang-Hyun Lee, Hwaseong-si, KR;

Sung-Woo Kang, Suwon-si, KR;

Keun-Hee Bai, Suwon-si, KR;

Hak-Yoon Ahn, Seoul, KR;

Seong-Han Oh, Namyangju-si, KR;

Young-Mook Oh, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Lee IP Law, P.C.

Primary Examiner:

Nicholas J Tobergte

Assistant Examiner:

Kien C Ly

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 27/11 (2006.01); H01L 27/088 (2006.01); H01L 23/535 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01); H01L 21/7682 (2013.01); H01L 21/76805 (2013.01); H01L 21/76895 (2013.01); H01L 21/823431 (2013.01); H01L 21/823468 (2013.01); H01L 21/823475 (2013.01); H01L 23/535 (2013.01); H01L 27/0886 (2013.01); H01L 27/1104 (2013.01); H01L 29/4991 (2013.01); H01L 29/518 (2013.01);
Abstract

A semiconductor device includes gates extending in a first direction on a substrate, each gate of the gates including a gate insulation layer, a gate electrode, and a first spacer, first contact plugs contacting the substrate between adjacent ones of the gates, the first contact plugs being spaced apart from sidewalls of corresponding ones of the gates, a second contact plug contacting an upper surface of a corresponding gate electrode, the second contact plug being between first contact plugs, and an insulation spacer in a gap between the second contact plug and an adjacent first contact plug, the insulation spacer contacting sidewalls of the second contact plug and the adjacent first contact plug, and upper surfaces of the second contact plug and the adjacent first contact plug being substantially coplanar with each other.

Find Patent Forward Citations

Loading…