The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2021
Filed:
Sep. 14, 2020
Taiwan Carbon Nano Technology Corporation, Miaoli County, TW;
Kuang-Jui Chang, Miaoli County, TW;
Yu-Hsuan Liao, Miaoli County, TW;
Chun-Hsien Tsai, Miaoli County, TW;
Ting-Chuan Lee, Miaoli County, TW;
Chun-Jung Tsai, Miaoli County, TW;
TAIWAN CARBON NANO TECHNOLOGY CORPORATION, Zhunan Township, Miaoli County, TW;
Abstract
A dry etching process for manufacturing a trench structure of a semiconductor apparatus, including the steps of: step 1, providing a semiconductor substrate, wherein the semiconductor substrate is provided with a patterned photoresist layer and placed in a reaction chamber; step 2, introducing a first etching gas into the reaction chamber to perform a first etching process to form a trench, wherein the first etching gas includes sulfur hexafluoride, oxygen, helium, nitrogen trifluoride, and a first organic silicide; step 3, introducing a second etching gas into the reaction chamber to perform a second etching process to further etch the trench, wherein the second etching gas includes sulfur hexafluoride, oxygen, helium, and a second organic silicide; and step 4, introducing a third etching gas into the reaction chamber to perform a third etching process, wherein the third etching gas includes hydrobromic acid, oxygen, and helium.