The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2021
Filed:
Nov. 06, 2017
Applicant:
Toshiba Memory Corporation, Tokyo, JP;
Inventors:
Akifumi Gawase, Kuwana Mie, JP;
Yukiteru Matsui, Nagoya Aichi, JP;
Takahiko Kawasaki, Nagoya Aichi, JP;
Assignee:
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01L 21/687 (2006.01); H01L 21/67 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30604 (2013.01); H01L 21/32115 (2013.01); H01L 21/6708 (2013.01); H01L 21/67075 (2013.01); H01L 21/67086 (2013.01); H01L 21/68764 (2013.01);
Abstract
In accordance with an embodiment, a manufacturing method of a semiconductor device includes bringing a first catalyst into contact with a workpiece to form an oxide film on a surface of the workpiece, and bringing a second catalyst different from the first catalyst and the oxide film into contact with each other or moving the second catalyst and the oxide film closer to each other to elute the oxide film into a treatment liquid.