The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2021
Filed:
Feb. 29, 2020
Applicant:
The Japan Steel Works, Ltd., Tokyo, JP;
Inventors:
Naoyuki Kobayashi, Tokyo, JP;
Hiroaki Imamura, Tokyo, JP;
Assignee:
THE JAPAN STEEL WORKS, LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02686 (2013.01); H01L 29/66765 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01);
Abstract
A method for manufacturing a semiconductor film capable of forming a semiconductor film with high crystalline quality using a solid-state laser is provided. A method for manufacturing a semiconductor film according to the present disclosure includes the steps of (a) irradiating an amorphous semiconductor film with a first pulsed laser beam emitted from a solid-state laser, and then after the step (a), (b) irradiating the semiconductor film with a second pulsed laser beam including intensity lower than that of the first pulsed laser beam.