The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2021
Filed:
Oct. 05, 2017
Applicant:
Hexagem Ab, Hjarup, SE;
Inventor:
Jonas Ohlsson, Malmo, SE;
Assignee:
HEXAGEM AB, Hjarup, SE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 21/0254 (2013.01); H01L 21/0242 (2013.01); H01L 21/02458 (2013.01); H01L 21/02603 (2013.01); B82Y 40/00 (2013.01);
Abstract
A semiconductor device including a nanostructure, comprising a planar layer () of a Ill-nitride semiconductor crystal, which layer includes an array of epitaxially grown nanowire structures (), and semiconductor material () which is redistributed from said nanowire structures in a reformation step after epitaxial growth, arranged to fill out a spacing between the nanowire structures, wherein the array of nanowire structures and the semiconductor material form a coherent layer.