The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2021
Filed:
Dec. 03, 2018
Asm Ip Holding Bv, Almere, NL;
Lingyun Jia, Helsinki, FI;
Viljami Pore, Helsinki, FI;
Eva Tois, Helsinki, FI;
Sun Ja Kim, Helsinki, FI;
ASM IP HOLDING B.V., Almere, NL;
Abstract
Plasma enhanced atomic layer deposition (PEALD) processes for simultaneously depositing SiOC on two or more different surfaces of a substrate are provided. For example, SiOC may be deposited simultaneously on a first dielectric surface and a second metal or metallic surface. The PEALD processes can comprise two or more deposition cycles for forming SiOC on the two surfaces. The deposition cycles may comprise alternately and sequentially contacting the substrate with a first precursor comprising silicon and a second plasma reactant, such as an Ar/Hplasma. In some embodiments, a PEALD process further comprises contacting the substrate with a plasma reactant prior to beginning the deposition cycle. In some embodiments, the deposition cycle is repeated more than 500 times and a uniform SiOC film may be formed on the two different surfaces.