The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 27, 2021

Filed:

Mar. 19, 2020
Applicant:

Tdk Corporation, Tokyo, JP;

Inventors:

Mariko Fujiwara, Tokyo, JP;

Makoto Iwasaki, Tokyo, JP;

Assignee:

TDK CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C22C 38/16 (2006.01); C22C 38/14 (2006.01); C22C 38/10 (2006.01); C22C 38/00 (2006.01); C22C 38/06 (2006.01); H01F 1/057 (2006.01); B22F 3/24 (2006.01);
U.S. Cl.
CPC ...
H01F 1/057 (2013.01); B22F 3/24 (2013.01); C22C 38/002 (2013.01); C22C 38/005 (2013.01); C22C 38/06 (2013.01); C22C 38/10 (2013.01); C22C 38/14 (2013.01); C22C 38/16 (2013.01); B22F 2003/248 (2013.01);
Abstract

The present invention provides an R-T-B based permanent magnet capable of improving a coercive force HcJ while maintaining a residual magnetic flux density Br. The R-T-B based permanent magnet includes Ga. R is one or more selected from rare earth elements, T is Fe or a combination of Fe and Co, and B is boron. The R-T-B based permanent magnet has main phase grains including a crystal grain having an RTB crystal structure and grain boundaries formed between adjacent two or more main phase grains, and 0.030≤[Ga]/[R]≤0.100 is satisfied in which [Ga] represents an atomic concentration of Ga and [R] represents an atomic concentration of R in the main phase grains.


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