The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2021
Filed:
Oct. 07, 2019
SK Hynix Inc., Icheon, KR;
Seung Yun Lee, Seongnam, KR;
SK hynix Inc., Icheon, KR;
Abstract
The present technology provides an electronic device, a memory device, and a method of operating a memory device. The memory device includes a memory cell array including a variable resistance memory cell coupled to a first conductive line and a second conductive line, and a peripheral circuit configured to provide a write pulse or a read pulse to the variable resistance memory cell through the first conductive line. The write pulse is controlled to have one of a first polarity and a second polarity that are opposite to each other. The read pulse is controlled to have a polarity corresponding to a greater value of first and second amorphization start current values of the variable resistance memory cell, the first amorphization start current value being determined by a first pulse having the first polarity, the second amorphization start current value being determined by a second pulse having the second polarity.