The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 27, 2021

Filed:

Mar. 06, 2017
Applicant:

Zentel Japan Corporation, Tokyo, JP;

Inventors:

Masaru Haraguchi, Tokyo, JP;

Takashi Kubo, Tokyo, JP;

Yasuhiko Tsukikawa, Tokyo, JP;

Hironori Iga, Tokyo, JP;

Kenichi Yasuda, Tokyo, JP;

Takeshi Hamamoto, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 13/00 (2006.01); G11C 11/4093 (2006.01); G06F 12/06 (2006.01); G06F 13/16 (2006.01); G11C 11/4072 (2006.01); G11C 11/408 (2006.01); G11C 11/4091 (2006.01); G11C 11/4096 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4093 (2013.01); G06F 12/0646 (2013.01); G06F 13/1668 (2013.01); G11C 11/4072 (2013.01); G11C 11/4085 (2013.01); G11C 11/4091 (2013.01); G11C 11/4096 (2013.01); G06F 2212/1008 (2013.01);
Abstract

A control device of the invention for a semiconductor memory device comprising an interface conforming to JEDEC standard of DDRx-SDRAM or LPDDRx-SDRAM, comprises banks, a read/write control circuit, and a transfer control circuit. Each bank comprises subarrays. Each subarray comprises memory cells arranged along bit lines and word lines. The read/write control circuit controls reading of data from and writing of data to the semiconductor memory device. The transfer control circuit controls data transfer inside the semiconductor memory device and sets to enable an additional transfer command not specified in the JEDEC standard and a transfer command for writing data, read from a transfer source memory cell, to a transfer destination memory cell without passing outside the semiconductor memory device by transmitting a first signal value not used in the JEDEC standard to the semiconductor memory device via at least one signal line of the interface.


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