The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2021
Filed:
Nov. 18, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventor:
Sang-Ryong Park, Hwaseong-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G06F 3/06 (2006.01); G11C 16/26 (2006.01); H03M 13/11 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0679 (2013.01); G06F 3/0626 (2013.01); G06F 3/0634 (2013.01); G06F 3/0653 (2013.01); G06F 3/0656 (2013.01); G06F 3/0659 (2013.01); G11C 16/0483 (2013.01); G11C 16/26 (2013.01); H03M 13/1111 (2013.01);
Abstract
A memory controller includes an error correction code (ECC) module for performing ECC decoding based on read data received from a non-volatile memory device for performing an on-chip valley search (OVS) read operation. A read voltage modification module receives status bits representing a latch that latches the read data among a plurality of latches included in the non-volatile memory device to store result values of the OVS read operation and determine whether to change a read voltage based on the status bits when the ECC decoding is successfully performed.