The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 27, 2021

Filed:

Jul. 22, 2016
Applicant:

Hitachi, Ltd., Tokyo, JP;

Inventors:

Sukekazu Aratani, Tokyo, JP;

Hiroshi Sasaki, Tokyo, JP;

Toyotaka Yuasa, Tokyo, JP;

Kohhei Aida, Tokyo, JP;

Yasuhiko Tada, Tokyo, JP;

Masahiro Kawasaki, Tokyo, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 31/22 (2006.01); G01K 11/16 (2021.01); G01K 3/04 (2006.01); G01K 11/12 (2021.01); B32B 29/00 (2006.01); G01K 11/18 (2006.01); G01N 33/02 (2006.01); G01N 33/15 (2006.01);
U.S. Cl.
CPC ...
G01N 31/229 (2013.01); B32B 29/002 (2013.01); G01K 3/04 (2013.01); G01K 11/12 (2013.01); G01K 11/16 (2013.01); G01K 11/18 (2013.01); G01N 33/02 (2013.01); G01N 33/15 (2013.01); B32B 2250/03 (2013.01); B32B 2255/12 (2013.01); B32B 2323/04 (2013.01); B32B 2519/00 (2013.01);
Abstract

A purpose of the present invention is to provide a temperature history indicator that allows for visual confirmation of whether the temperature is at or below a prescribed temperature as well as simple conversion of this information into data. A temperature history indicator according to the present invention is characterized by being provided with a label layer and a temperature-indicating layer laminated above or below the label layer, wherein the temperature-indicating layer includes a substance having at crystallization starting temperature of 10° C. or lower and a melting point at least 20° C. higher than the crystallization starting temperature.


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