The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 27, 2021

Filed:

Oct. 22, 2019
Applicant:

Invensense, Inc., San Jose, CA (US);

Inventor:

Dongyang Kang, San Jose, CA (US);

Assignee:

InvenSense, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81B 7/00 (2006.01); B81B 3/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81B 3/0008 (2013.01); B81C 1/00269 (2013.01); B81C 1/00388 (2013.01); B81C 1/00968 (2013.01); B81C 2201/014 (2013.01); B81C 2203/036 (2013.01);
Abstract

A method includes forming a first mask on a first portion of a first surface of a substrate, forming a second mask on the first mask and further forming the second mask on a second portion of the first surface of the substrate, and etching an exposed portion of the first surface of the substrate and removing the second mask. According to some embodiments, an exposed portion of the first surface of the substrate is etched and the first mask is removed. An oxide layer is formed on the first surface of the substrate. A third mask is formed on the oxide layer except for a portion of the oxide layer corresponding to bumpstop features. The portion of the oxide layer corresponding to the bumpstop features is removed. An exposed portion of the first surface of the substrate is etched and the third mask is removed.


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