The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2021
Filed:
Dec. 20, 2018
Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;
Tougo Nakatani, Toyama, JP;
Takahiro Okaguchi, Toyama, JP;
Norio Ikedo, Toyama, JP;
Takeshi Yokoyama, Toyama, JP;
Tomohito Yabushita, Osaka, JP;
Toru Takayama, Toyama, JP;
Shoichi Takasuka, Toyama, JP;
PANASONIC SEMICONDUCTOR SOLUTIONS CO., LTD., Kyoto, JP;
Abstract
A semiconductor laser device includes: a first semiconductor layer on a first conductivity side; a second semiconductor layer on the first conductivity side; an active layer; a third semiconductor layer on a second conductivity side different from the first conductivity side; and a fourth semiconductor layer on the second conductivity side. Eg2<Eg3 is satisfied, where Eg2 and Eg3 denote maximum values of band gap energy of the second semiconductor layer and the third semiconductor layer, respectively. The third semiconductor layer includes a first region layer in which band gap energy monotonically decreases toward the fourth semiconductor layer. N2>N3 is satisfied, where N2 denotes an impurity concentration of the second semiconductor layer, and N3 denotes an impurity concentration of the third semiconductor layer.