The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2021
Filed:
Jan. 27, 2019
Hewlett Packard Enterprise Development Lp, Houston, TX (US);
Binhao Wang, Palo Alto, CA (US);
Wayne Sorin, Mountain View, CA (US);
Michael Renne Ty Tan, Menlo Park, CA (US);
Sagi Varghese Mathai, Palo Alto, CA (US);
Stanley Cheung, Palo Alto, CA (US);
Hewlett Packard Enterprise Development LP, Houston, TX (US);
Abstract
A VCSEL device includes a substrate and a first DBR structure disposed on the substrate. The VCSEL device further includes a cathode contact disposed on a top surface of the first DBR structure. In addition, the VCSEL device includes a VCSEL mesa that is disposed on the top surface of the first DBR structure. The VCSEL mesa includes a quantum well, a non-circularly-shaped oxide aperture region disposed above the quantum well, and a second DBR structure disposed above the non-circularly-shaped oxide aperture region. In addition, the VCSEL mesa includes a selective polarization structure disposed above the second DBR structure and an anode contact disposed above the selective polarization structure.