The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2021
Filed:
Jul. 31, 2019
Applicant:
Apple Inc., Cupertino, CA (US);
Inventors:
Igal I. Bayn, Sunnyvale, CA (US);
Andrew J. Sutton, Sunnyvale, CA (US);
Alexander Shpunt, Portola Valley, CA (US);
Yuval Gerson, Sunnyvale, CA (US);
Assignee:
APPLE INC., Cupertino, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/02 (2006.01); H01S 5/343 (2006.01); H01S 5/042 (2006.01); G02F 1/025 (2006.01); H01S 5/022 (2021.01); H01S 5/024 (2006.01); H01S 5/14 (2006.01); H01S 5/125 (2006.01); G02F 1/015 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0218 (2013.01); G02F 1/025 (2013.01); H01S 5/021 (2013.01); H01S 5/02228 (2013.01); H01S 5/02461 (2013.01); H01S 5/042 (2013.01); H01S 5/34306 (2013.01); G02F 2001/0152 (2013.01); G02F 2001/0156 (2013.01); G02F 2201/063 (2013.01); G02F 2201/346 (2013.01); G02F 2202/102 (2013.01); H01S 5/125 (2013.01); H01S 5/14 (2013.01);
Abstract
An optoelectronic device includes a silicon substrate, with a silicon waveguide layer disposed over the silicon substrate and including an optical waveguide. One or more through-silicon vias (TSVs) extend through the silicon substrate and contact the silicon waveguide layer. A III-V base layer is disposed over the silicon waveguide layer, and an optical amplifier is disposed on the III-V base layer and optically coupled to the optical waveguide.