The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2021
Filed:
Jan. 05, 2018
Samsung Electronics Co., Ltd., Suwon-si, KR;
Il Mok Park, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a first word line, a first bit line, a mold film, and a first memory cell. The first bit line crosses a direction of the first word line and is spaced from the first word line. The mold film fills space between the first word line and the first bit line. The first memory cell is in the mold film and between the first word line and the first bit line. The first memory cell includes a first lower electrode on the first word line, a first phase-change film on the first lower electrode, a first intermediate electrode on the first phase-change film, a first ovonic threshold switch (OTS) on the first intermediate electrode, and a first upper electrode between the first OTS and the first bit line. A resistivity of the first lower electrode ranges from about 1 to about 30 mΩ·cm.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile