The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10985311 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 20, 2021

Filed:

Sep. 10, 2019
Applicant:

Tdk Corporation, Tokyo, JP;

Inventor:

Hayato Koike, Tokyo, JP;

Assignee:

TDK CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 43/10 (2006.01); H01L 43/02 (2006.01); G01R 33/09 (2006.01); H01L 29/66 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
H01L 43/10 (2013.01); G01R 33/093 (2013.01); H01L 29/66984 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01);
Abstract

A semiconductor element includes a semiconductor layer, a first electrode and a second electrode. The first electrode and the second electrode are separated from each other on the semiconductor layer. The semiconductor layer has a first semiconductor region and a second semiconductor region. The first electrode and the second electrode are provided on the first semiconductor region. The second semiconductor region is separated from the first electrode and the second electrode. The second semiconductor region is provided to be in contact with at least a part of an end surface of the first semiconductor region. The first semiconductor region has n-type/p-type conductivity. The second semiconductor region has p-type/n-type conductivity.


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