The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2021
Filed:
May. 27, 2019
Industrial Technology Research Institute, Hsinchu, TW;
Intellectual Property Innovation Corporation, Hsinchu, TW;
Yen-Ching Kuo, Keelung, TW;
Chien-Chang Hung, Hsinchu, TW;
Jane-Hway Liao, Hsinchu County, TW;
Yi-Hsiang Huang, Changhua County, TW;
Shu-Tang Yeh, Taichung, TW;
Hong-Ming Dai, Tainan, TW;
Hung-Yi Chen, New Taipei, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Intellectual Property Innovation Corporation, Hsinchu, TW;
Abstract
A package of photoelectric device including a substrate, at least one photoelectric device, a first barrier layer, a wavelength-converting layer, and a second barrier layer is provided. The photoelectric device is disposed on the substrate. The first barrier layer is disposed on the substrate and covers the photoelectric device. The wavelength-converting layer is disposed on the first barrier layer. The second barrier layer covers the wavelength-converting layer. A composition of the first barrier layer includes a nitrogen content of more than 0 atomic percent (at %) to 10 at %, an oxygen content of 50 at % to 70 at %, and a silicon content of 30 at % to 50 at %.