The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 20, 2021

Filed:

Apr. 05, 2019
Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventors:

Alessandro Paolo Bramanti, Maglie, IT;

Alberto Pagani, Nova Milanese, IT;

Assignee:

STMICROELECTRONICS S.r.l., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H03K 17/687 (2006.01); H01L 29/205 (2006.01); H01L 29/20 (2006.01); H01L 21/02 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/778 (2013.01); H01L 21/0254 (2013.01); H01L 21/02546 (2013.01); H01L 27/0605 (2013.01); H01L 27/0629 (2013.01); H01L 29/1029 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/402 (2013.01); H01L 29/41758 (2013.01); H01L 29/42316 (2013.01); H01L 29/66462 (2013.01); H03K 17/687 (2013.01);
Abstract

Embodiments are directed to two-dimensional electron gas (2DEG)-confined 2DEG devices and methods. One such device includes a substrate and a heterostructure on the substrate. The heterostructure includes a first semiconductor layer, a second semiconductor layer, and a 2DEG layer between the first and second semiconductor layers. The device further includes a 2DEG device having a conduction channel in the 2DEG layer. An isolation electrode overlies the heterostructure and at least partially surrounds a periphery of the 2DEG device. The isolation electrode, in use, interrupts the 2DEG layer in response to an applied voltage.


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