The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2021
Filed:
Feb. 16, 2017
G-ray Switzerland SA, Hauterive, CH;
Hans Von Känel, Wallisellen, CH;
G-ray Switzerland SA, Hauterive, CH;
Abstract
Oxide-free, low temperature wafer bonding permits electric current to cross the covalently bonded interface unimpeded by traps, recombination centers and unintentional, defect-induced blocking barriers when interfacial defects are passivated by hydrogen diffused from shallow implants towards the interface. Systems and methods comprising oxide-free, low temperature covalent wafer bonding with passivated interface states are used in various applications requiring reduced interfacial scattering and carrier trapping and efficient charge collection across bonded interfaces.
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