The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2021
Filed:
Aug. 02, 2019
Toshiba Memory Corporation, Tokyo, JP;
Takayuki Kashima, Yokkaichi Mie, JP;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor memory device includes a plurality of first conductor layers stacked in a first direction, a second conductor layer provided above the first conductor layer, a first semiconductor layer extending in the first direction in the plurality of first conductor layers, a second semiconductor layer including a first portion extending in the first direction in the second conductor layer and a second portion of which a diameter in a cross section orthogonal to the first direction is larger than a diameter of the first portion, and being in contact with the first semiconductor layer in the second portion, and a first charge storage layer disposed between the plurality of first conductor layers and the first semiconductor layer. An upper end of the first charge storage layer protrudes upward in the first direction in comparison with an upper end of the first semiconductor layer.