The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2021
Filed:
Dec. 14, 2018
John Bennett, Sammamish, WA (US);
John Bennett, Sammamish, WA (US);
Other;
Abstract
A dynamic gain cell memory cell capable of storing multiple values is described herein. In one example, a memory cell may include an input, such as a first transistor. The memory cell may further include a capacitive element coupled to the input, where the capacitive element stores one or more values corresponding to one of multiple voltage levels. A sense transistor configured to operate in source-follower mode may be coupled to the capacitive element, where the charge on the capacitive element controls operation of the sense transistor, such as through a gate of the sense transistor. The memory cell may further include an output connected to the drain of the sense transistor, where current flows through the transistor when the output is activated to access the one or more values stored in capacitive element.