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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10985104 B1

PDFFull Text
Date of Patent:
Apr. 20, 2021

Filed:

Aug. 15, 2018

Semiconductor device having electrode pad and electrode layer intervening semiconductor layer inbetween and manufacturing method thereof

Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventors:

Seiji Inumiya, Kanazawa Ishikawa, JP;

Kyoichi Suguro, Yokohama Kanagawa, JP;

Assignees:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Attorney:

White & Case LLP

Primary Examiner:

Sonya McCall-Shepard

Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 23/373 (2006.01); H01L 27/24 (2006.01); H01L 29/10 (2006.01); H01L 29/739 (2006.01); H01L 23/00 (2006.01); C25D 3/38 (2006.01); H01L 21/283 (2006.01); C25D 5/02 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53233 (2013.01); C25D 3/38 (2013.01); C25D 5/02 (2013.01); H01L 21/283 (2013.01); H01L 21/76843 (2013.01); H01L 23/3736 (2013.01); H01L 27/2454 (2013.01); H01L 29/1079 (2013.01); H01L 29/7395 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/08058 (2013.01);
Abstract

A semiconductor device according to an embodiment includes a first electrode pad containing copper as a main component and having a thickness equal to or more than 5 μm and less than 50 μm; an electrode layer containing copper as a main component and having a thickness equal to or more than 5 μm and less than 50 μm; and a semiconductor layer provided between the first electrode pad and the electrode layer.

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Inumiya, Seiji. (2021). Semiconductor device having electrode pad and electrode layer intervening semiconductor layer inbetween and manufacturing method thereof (U.S. Patent No. 10985104). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10985104

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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