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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10985102 B1

PDFFull Text
Date of Patent:
Apr. 20, 2021

Filed:

May. 13, 2019

Semiconductor device, fabrication method for a semiconductor device and electronic apparatus

Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Yoshihisa Kagawa, Kanagawa, JP;

Kenichi Aoyagi, Kanagawa, JP;

Yoshiya Hagimoto, Kanagawa, JP;

Nobutoshi Fujii, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:

Sheridan Ross P.C.

Primary Examiner:

Niki H Nguyen

Int. Cl.
CPC ...
H01L 31/0232 (2014.01); H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 27/146 (2006.01); H01L 23/00 (2006.01); H04N 5/369 (2011.01); H01L 23/532 (2006.01); H01L 23/48 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 21/7684 (2013.01); H01L 21/76807 (2013.01); H01L 21/76841 (2013.01); H01L 21/76843 (2013.01); H01L 23/528 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01); H01L 23/53295 (2013.01); H01L 23/564 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 24/83 (2013.01); H01L 27/1464 (2013.01); H01L 27/1469 (2013.01); H01L 27/14609 (2013.01); H01L 27/14621 (2013.01); H01L 27/14625 (2013.01); H01L 27/14627 (2013.01); H01L 27/14636 (2013.01); H01L 27/14645 (2013.01); H04N 5/369 (2013.01); H01L 23/481 (2013.01); H01L 27/0688 (2013.01); H01L 2221/1031 (2013.01); H01L 2224/02245 (2013.01); H01L 2224/0508 (2013.01); H01L 2224/05027 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05546 (2013.01); H01L 2224/05547 (2013.01); H01L 2224/05571 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05578 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05686 (2013.01); H01L 2224/08121 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/0903 (2013.01); H01L 2224/80011 (2013.01); H01L 2224/80013 (2013.01); H01L 2224/80035 (2013.01); H01L 2224/80091 (2013.01); H01L 2224/80097 (2013.01); H01L 2224/80203 (2013.01); H01L 2224/80345 (2013.01); H01L 2224/80357 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2224/80935 (2013.01); H01L 2224/83345 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/053 (2013.01); H01L 2924/12043 (2013.01); H01L 2924/13091 (2013.01);
Abstract

Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

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