The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 20, 2021

Filed:

Aug. 31, 2020
Applicant:

Akash Systems, Inc., San Francisco, CA (US);

Inventors:

Tyrone D. Mitchell, Jr., San Francisco, CA (US);

Felix Ejeckam, San Francisco, CA (US);

Daniel Francis, San Francisco, CA (US);

Paul Saunier, San Francisco, CA (US);

Kris Kong, San Francisco, CA (US);

Assignee:

Akash Systems, Inc., San Francisco, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 10/50 (2013.01); H04B 7/185 (2006.01); H01L 27/06 (2006.01); H01L 23/373 (2006.01); H04W 52/52 (2009.01); H04B 1/02 (2006.01); H04B 1/06 (2006.01); H04B 10/564 (2013.01); G01J 3/44 (2006.01); H04B 1/04 (2006.01); B64G 1/10 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3732 (2013.01); B64G 1/10 (2013.01); G01J 3/44 (2013.01); H01L 27/0605 (2013.01); H01L 27/0617 (2013.01); H04B 1/02 (2013.01); H04B 1/04 (2013.01); H04B 1/06 (2013.01); H04B 7/185 (2013.01); H04B 7/18513 (2013.01); H04B 7/18515 (2013.01); H04B 7/18517 (2013.01); H04B 7/18523 (2013.01); H04B 7/18532 (2013.01); H04B 10/501 (2013.01); H04B 10/564 (2013.01); H04W 52/52 (2013.01); H04B 2001/0491 (2013.01);
Abstract

Aspects of wireless communication are described, including a radiofrequency (RF) amplifier chip, configured for transmitting or receiving data, comprising a first substrate comprising a first material and a second substrate comprising a second material that is different from the first material. The first substrate and the second substrate may be lattice-matched such that an interface region between the first substrate and the second substrate exhibits an sp3 carbon peak at about 1332 cm·having a full width half maximum of no more than 5.0 cm·as measured by Raman spectroscopy. In some aspects, the first substrate and said second substrate permit said chip to transmit or receive data at a transfer rate of at least 500 megabits per second and a frequency of at least 8 GHz. In some aspects, the RF amplifier chip is part of a satellite transmitter.


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