The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 20, 2021

Filed:

Aug. 04, 2017
Applicant:

Dynax Semiconductor, Inc., Kunshan, CN;

Inventors:

Naiqian Zhang, Kunshan, CN;

Pan Pan, Kunshan, CN;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 21/762 (2006.01); H01L 21/20 (2006.01); H01L 21/308 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76259 (2013.01); H01L 21/2022 (2013.01); H01L 21/3081 (2013.01); H01L 21/76243 (2013.01); H01L 21/76264 (2013.01); H01L 24/84 (2013.01); H01L 29/40 (2013.01);
Abstract

The present disclosure relates to the technical field of semiconductors, and in particular to a semiconductor chip, a semiconductor wafer and a method for manufacturing a semiconductor wafer. The semiconductor chip comprises: a substrate, devices provided on a side of the substrate, via holes running through the substrate, conductive material filled in the via holes and contacted with the devices, and a backside metal layer provided on the other side of the substrate away from the devices, the backside metal layer coming into contact with the conductive material so as to be electrically connected to the devices via the conductive material. The semiconductor chip, the semiconductor wafer and the method for manufacturing a semiconductor wafer of the present disclosure reduce the ground resistance and improve the heat dissipation of devices with via holes structure during the operation.


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