The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 20, 2021

Filed:

Feb. 26, 2019
Applicant:

Kokusai Electric Corporation, Tokyo, JP;

Inventors:

Katsuhiko Yamamoto, Toyama, JP;

Takuya Joda, Toyama, JP;

Toru Kakuda, Toyama, JP;

Sadayoshi Horii, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/318 (2006.01); H01L 21/02 (2006.01); C23C 8/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02337 (2013.01); C23C 8/16 (2013.01); H01L 21/02323 (2013.01); H01L 21/0223 (2013.01); H01L 21/02164 (2013.01);
Abstract

Described herein is a technique capable of improving a quality of a substrate processing performed using hydrogen peroxide. According to one aspect of the technique described herein, there is provided a method of manufacturing a semiconductor device including: (a) supplying a first process gas containing water and a first concentration of hydrogen peroxide to a substrate having a silicon-containing film formed on a surface thereof; and (b) supplying a second process gas containing water and a second concentration of hydrogen peroxide higher than the first concentration to the substrate after (a).


Find Patent Forward Citations

Loading…