The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 20, 2021

Filed:

Dec. 28, 2018
Applicant:

Tdk Corporation, Tokyo, JP;

Inventors:

Shinji Hara, Tokyo, JP;

Akimasa Kaizu, Tokyo, JP;

Assignee:

TDK CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01F 10/32 (2006.01); H01L 43/02 (2006.01); H01F 41/32 (2006.01); H01L 43/12 (2006.01); H03H 11/16 (2006.01); H03F 15/00 (2006.01); H01L 43/10 (2006.01); H03H 11/04 (2006.01); H03H 2/00 (2006.01);
U.S. Cl.
CPC ...
H01F 10/329 (2013.01); H01F 10/324 (2013.01); H01F 10/3254 (2013.01); H01F 10/3268 (2013.01); H01F 10/3286 (2013.01); H01F 41/32 (2013.01); H01L 43/02 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01); H03F 15/00 (2013.01); H03H 2/00 (2013.01); H03H 11/04 (2013.01); H03H 11/16 (2013.01);
Abstract

The magnetoresistance effect device includes: a magnetoresistance effect element that includes a first magnetization free layer, a magnetization fixed layer or a second magnetization free layer, and a spacer layer interposed between the first magnetization free layer and the magnetization fixed layer or the second magnetization free layer; and a magnetic material part that applies a magnetic field to the magnetoresistance effect element, wherein the magnetic material part is arranged to surround an outer circumference of the magnetoresistance effect element in a plan view in a stacking direction L of the magnetoresistance effect element.


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