The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 20, 2021

Filed:

Mar. 05, 2019
Applicant:

Phison Electronics Corp., Miaoli, TW;

Inventors:

Wei Lin, Taipei, TW;

An-Cheng Liu, Taipei, TW;

Szu-Wei Chen, New Taipei, TW;

Yu-Siang Yang, New Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/12 (2006.01); G11C 11/4091 (2006.01); G11C 16/34 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/12 (2013.01); G11C 11/4091 (2013.01); G11C 16/26 (2013.01); G11C 16/3481 (2013.01);
Abstract

A memory control method for a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The method includes: reading a first physical unit based on a first read voltage level to obtain first data; reading the first physical unit based on a second read voltage level to obtain second data; reading the first physical unit based on a third read voltage level to obtain third data; obtaining a first reference value which reflects a data variation status between the first data and the second data; obtaining a second reference value which reflects a data variation status between the first data and the third data; reading the first physical unit based on a fourth read voltage level to obtain fourth data according to the first reference value and the second reference value; and decoding the fourth data by a decoding circuit.


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