The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 20, 2021

Filed:

Feb. 10, 2020
Applicant:

Kioxia Corporation, Minato-ku, JP;

Inventor:

Hiroki Date, Chigasaki, JP;

Assignee:

Kioxia Corporation, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/56 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/26 (2006.01); G11C 16/30 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5642 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/26 (2013.01); G11C 16/30 (2013.01);
Abstract

A semiconductor storage device includes: a voltage generation circuit configured to generate a read voltage to be supplied to a selected word line to which a read-target memory cell transistor is connected and a read-pass voltage to be supplied to an adjacent word line; a word line driver configured to, when the read voltage transitions, apply the read voltage to the selected word line with a first kick voltage amount and apply the read-pass voltage to the adjacent word line with a second kick voltage amount; and a control circuit configured to set each of the first kick voltage amount and the second kick voltage amount to a voltage corresponding to an amount of the transition.


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