The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 20, 2021

Filed:

Oct. 11, 2019
Applicant:

Socionext Inc., Kanagawa, JP;

Inventors:

Kyota Shimizu, Yokohama, JP;

Toshiya Suzuki, Yokohama, JP;

Tomohiko Koto, Yokohama, JP;

Assignee:

SOCIONEXT INC., Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 1/618 (2006.01); G11C 7/10 (2006.01); H03K 3/281 (2006.01); H03K 3/356 (2006.01); H03K 19/00 (2006.01); H03K 19/003 (2006.01); H03K 19/0175 (2006.01);
U.S. Cl.
CPC ...
G05F 1/618 (2013.01); G11C 7/1057 (2013.01); H03K 3/281 (2013.01); H03K 3/356113 (2013.01); H03K 19/0013 (2013.01); H03K 19/00361 (2013.01); H03K 19/0175 (2013.01);
Abstract

An output circuit includes: a first p-type transistor having a source connected to VDDH and a gate to which an input signal is fed; and a second p-type transistor having a source connected to the drain of the first p-type transistor, a drain connected to an output terminal, and a gate connected to a first node. A capacitor has one terminal to which the input signal is fed and the other terminal connected to the first node. A first n-type transistor has a source connected to VDDL, a drain connected to the first node, and a gate to which a signal corresponding to the input signal is fed. A second n-type transistor has a source and a gate both connected to VDDL and a drain connected to the first node.


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