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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10983434 B1

PDFFull Text
Date of Patent:
Apr. 20, 2021

Filed:

Oct. 01, 2018

Photoresist composition for deep ultraviolet light patterning method and method of manufacturing semiconductor device

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jeong-ho Mun, Yongin-si, KR;

Suk-koo Hong, Suwon-si, KR;

Jin-joo Kim, Seoul, KR;

Gum-hye Jeon, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Muir Patent Law, PLLC

Primary Examiner:

Amanda C Walke

Int. Cl.
CPC ...
G03F 7/004 (2006.01); H01L 27/11575 (2017.01); G03F 7/039 (2006.01); G03F 7/11 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01); G03F 7/38 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
G03F 7/0045 (2013.01); G03F 7/0392 (2013.01); G03F 7/11 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); G03F 7/2004 (2013.01); G03F 7/2006 (2013.01); G03F 7/322 (2013.01); G03F 7/325 (2013.01); G03F 7/38 (2013.01); H01L 21/0275 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 27/11575 (2013.01); H01L 27/11582 (2013.01);
Abstract

Provided is a photoresist composition including a plasma light absorber and a method of manufacturing semiconductor devices using the same. The photoresist composition may include a developable polymer, a photoacid generator, a plasma light absorber, and an organic solvent. The plasma light absorber may be relatively transmissive to light used with a photolithographic patterning process (e.g., ultraviolet light) to pattern a layer formed with the photoresist composition and be relatively absorptive to light created in a subsequent etching process (such as light generated from a plasma). When forming a semiconductor device, a patterned photoresist layer may be more precisely generated and may better maintain is desired properties when used to etch various target layers of the semiconductor device.

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