The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2021
Filed:
Aug. 17, 2017
Applicant:
The University of Tokyo, Tokyo, JP;
Inventors:
Assignee:
THE UNIVERSITY OF TOKYO, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/225 (2006.01); G02F 1/025 (2006.01); G02F 1/017 (2006.01); G02F 1/21 (2006.01);
U.S. Cl.
CPC ...
G02F 1/2257 (2013.01); G02F 1/025 (2013.01); G02F 2001/212 (2013.01); G02F 2201/063 (2013.01);
Abstract
A MOS optical modulator having high modulation efficiency and a method of manufacturing the same are provided. A MOS optical modulator includes: a p-type Si layer constituting an optical waveguide; a gate insulating film provided on the optical waveguide; a gate layer provided on the gate insulating film and formed of an n-type group III-V semiconductor; a first contact portion connected to the gate layer; and a second contact portion connected to the Si layer.
Takenaka, Mitsuru. (2021). Metal-oxide-semiconductor (mos) optical modulator and method of manufacturing same (U.S. Patent No. 10983411). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10983411
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile