The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2021
Filed:
Aug. 09, 2019
Applicant:
Brown University, Providence, RI (US);
Inventors:
Gang Xiao, Barrington, RI (US);
Guanyang He, Providence, RI (US);
Assignee:
Brown University, Providence, RI (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 33/09 (2006.01); H01F 10/32 (2006.01); H01F 41/34 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01); H01L 43/02 (2006.01);
U.S. Cl.
CPC ...
G01R 33/098 (2013.01); H01F 10/3259 (2013.01); H01F 41/34 (2013.01); H01L 43/02 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract
A magnetic tunneling junction sensor includes a free ferromagnetic layer of material, a pinned ferromagnetic layer of material, the free ferromagnetic layer and the pinned ferromagnetic layer separated by a thin insulating layer of material through which electrons can tunnel, an oxidized silicon wafer, the free ferromagnetic layer, thin insulating layer and the pinned ferromagnetic layer deposited on the oxidized silicon wafer, and extrinsic magnetic flux.