The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2021
Filed:
Aug. 30, 2019
Applicant:
Enf Technology Co., Ltd., Yongin-si, KR;
Inventors:
Dong Hyun Kim, Yongin-si, KR;
Hyeon Woo Park, Yongin-si, KR;
Jang Woo Cho, Suwon-si, KR;
Tae Ho Kim, Yongin-si, KR;
Myung Ho Lee, Hwaseong-si, KR;
Myung Geun Song, Yongin-si, KR;
Assignee:
ENF TECHNOLOGY CO., LTD., Yongin-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); C09K 13/06 (2006.01); C09K 13/04 (2006.01);
U.S. Cl.
CPC ...
C09K 13/06 (2013.01); H01L 21/31111 (2013.01); C09K 13/04 (2013.01); H01L 21/31105 (2013.01);
Abstract
Provided are a silicon nitride layer etching composition, and more specifically, a silicon nitride layer etching composition, capable of etching the silicon nitride layer at a high selectivity ratio relative to a silicon oxide layer by comprising a polysilicon compound in the etching composition, an etching method of a silicon nitride layer using the same, and a method of manufacturing a semiconductor device.