The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 20, 2021

Filed:

Jun. 08, 2016
Applicant:

Han's Laser Technology Industry Group Co., Ltd., Shenzhen, CN;

Inventors:

Xuerui Yuan, Shenzhen, CN;

Xiaojun Zhang, Shenzhen, CN;

Lingtian Diao, Shenzhen, CN;

Yuguo Peng, Shenzhen, CN;

Jiangang Lu, Shenzhen, CN;

Xiao Liu, Shenzhen, CN;

Guodong Ma, Shenzhen, CN;

Jiangang Tang, Shenzhen, CN;

Jiangang Yin, Shenzhen, CN;

Yunfeng Gao, Shenzhen, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K 26/53 (2014.01); B23K 26/06 (2014.01); B23K 26/0622 (2014.01); B23K 26/082 (2014.01); B23K 26/00 (2014.01); B23K 26/16 (2006.01); B28D 5/00 (2006.01);
U.S. Cl.
CPC ...
B23K 26/53 (2015.10); B23K 26/0006 (2013.01); B23K 26/06 (2013.01); B23K 26/0604 (2013.01); B23K 26/0624 (2015.10); B23K 26/0821 (2015.10); B23K 26/16 (2013.01); B28D 5/0011 (2013.01);
Abstract

A method for cutting sapphire comprising a sapphire body and a coating formed on the sapphire body, the method comprising: focusing a first COlaser beam the coating via a COfocusing assembly to remove the coating with a predetermined thickness extending along a first path; wherein dust and debris generated during removal of the coating are removed while the coating is removed; focusing an ultrafast laser beam on the sapphire body via an optical path shaping assembly to form a plurality of restructuring channels distributed along a second path and penetrating through the sapphire; wherein the second path coincides with the first path; scanning, by the second COlaser beam, the sapphire body via a galvanometer focusing assembly, wherein a path of the second COlaser beam scanning the sapphire body via a galvanometer focusing assembly coincides with or deviates from the second path, so that the sapphire cracks along the restructuring channels.


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