The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 13, 2021

Filed:

Aug. 14, 2019
Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventor:

Hiroyuki Yoshinaga, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/34 (2006.01); H01S 5/227 (2006.01); H01S 5/22 (2006.01); H01S 5/183 (2006.01); H01S 5/16 (2006.01);
U.S. Cl.
CPC ...
H01S 5/3402 (2013.01); H01S 5/168 (2013.01); H01S 5/18377 (2013.01); H01S 5/227 (2013.01); H01S 5/2224 (2013.01); H01S 5/2275 (2013.01);
Abstract

A quantum cascade semiconductor laser includes a laser structure having a first area including an end face, a second area, and a third area; a metal layer provided on a major surface in the third area; a separation area provided on the major surface; and a reflector provided on the laser structure. The reflector includes a dielectric film and a metal reflecting film provided on the end face and the separation area. The separation area has a first portion, a second portion, and a third portion. The metal layer has an edge separated from the end face in the third area. The contact layer has an edge separated from the end face in the third area. The first portion projects more than the second portion over the semiconductor mesa. The third portion projects more than the second portion over the semiconductor mesa.


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