The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 13, 2021

Filed:

Dec. 18, 2019
Applicant:

Hewlett Packard Enterprise Development Lp, Houston, TX (US);

Inventors:

Sagi Mathai, Sunnyvale, CA (US);

Michael Renne Ty Tan, Menlo Park, CA (US);

Wayne Victor Sorin, Mountain View, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/183 (2006.01); H01S 5/042 (2006.01); H01S 5/187 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/18377 (2013.01); H01S 5/0421 (2013.01); H01S 5/187 (2013.01); H01S 5/18305 (2013.01); H01S 5/18313 (2013.01); H01S 5/18341 (2013.01); H01S 5/18355 (2013.01); H01S 5/18369 (2013.01); H01S 5/18375 (2013.01); H01S 5/18394 (2013.01); H01S 5/343 (2013.01); H01S 2304/02 (2013.01); H01S 2304/04 (2013.01);
Abstract

In example implementations of a vertical-cavity surface-emitting laser (VCSEL), the VCSEL includes a p-type distributed Bragg reflector (p-DBR) layer and a p-type ohmic (p-ohmic) contact layer adjacent to the p-DBR layer. The p-DBR layer may include an oxide aperture and the p-ohmic contact layer may have an opening that is aligned with the oxide aperture. The opening may be filled with a dielectric material. A metal layer may be coupled to the p-ohmic contact layer and encapsulate the dielectric material.


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