The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2021
Filed:
Dec. 17, 2019
Xiamen San'an Optoelectronics Co., Ltd., Xiamen, CN;
Yung-Ling Lan, Wuhu, CN;
Chan-Chan Ling, Wuhu, CN;
Chi-Ming Tsai, Wuhu, CN;
Chia-Hung Chang, Wuhu, CN;
XIAMEN SAN'AN OPTOELECTRONICS CO., LTD, Xiamen, CN;
Abstract
A semiconductor light emitting device includes a multi-quantum-well structure, a first capping layer, a second capping layer, and an electron barrier layer stacked in order. The multi-quantum-well structure includes a plurality of alternately-stacked second potential barrier layers and potential well layers. The first capping layer is a semiconductor layer and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has a band gap larger than that of each of the second potential barrier layers and the band gap of the first capping layer is larger than that of the electron barrier layer. A method of preparing the semiconductor light emitting device is also provided.