The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2021
Filed:
Mar. 05, 2020
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Shunsuke Nitta, Hakusan Ishikawa, JP;
Takeru Matsuoka, Himeji Hyogo, JP;
Hiroshi Ohta, Nonoichi Ishikawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor part between first and second electrodes, first and second control electrodes between the semiconductor part and the second electrode. The semiconductor part includes a first region and a second region around the first region. The semiconductor part includes first and third layers of a first conductivity type and second layers of a second conductivity type. The second layers are provided between the first layer and the second electrode. A second layer faces the first control electrode in the second region. Another second layer faces the second control electrode in the second region. A third layer is provided between the second layer and the second electrode. Another third layer is provided between another second layer and the second electrode. The second layer includes a second conductivity type impurity with a concentration lower than that of a second conductivity type impurity in another second layer.