The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10978565 B1

Date of Patent:

Apr. 13, 2021

Filed:

Jun. 27, 2019

Power transistor device

Applicant:

Upi Semiconductor Corp., Hsinchu County, TW;

Inventors:

Chin-Fu Chen, Hsinchu County, TW;

Yi-Yun Tsai, Hsinchu County, TW;

Assignee:

uPl Semiconductor Corp., Hsinchu County, TW;

Attorney:

JCIPRNET

Primary Examiner:

Ida M Soward

Int. Cl.

CPC ...

H01L 27/06 (2006.01); H01L 27/10 (2006.01); H01L 29/40 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01);

U.S. Cl.

CPC ...

H01L 29/407 (2013.01); H01L 29/0692 (2013.01); H01L 29/1095 (2013.01); H01L 29/404 (2013.01); H01L 29/7813 (2013.01);

Abstract

Provided is a power transistor device including a substrate, a first electrode, and a second electrode. The substrate has an active region and a terminal region. The terminal region surrounds the active region. The substrate includes a first trench and a second trench. The first trench is disposed within the active region and adjacent to the terminal region. The second trench is disposed within the terminal region and adjacent to the active region. The first electrode and the second electrode are respectively disposed in the first trench and the second trench. The first electrode and the second electrode both are electrically floating.

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